| PART |
Description |
Maker |
| FA7612CN FA7612CP FA7612CPN FA7610CN FA7610CP FA76 |
Bipolar IC for switching power supply control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
FA7610CPN/FA7612CPN/FA7617CPN Bipolar IC Switching Power Supply Control
CAP CER 2000PF 50V 5% C0G 0603 0.08 A SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| MJE13007G |
NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-TA3-T MJE13007-TF3-T MJE13007L-TA3-T MJE1 |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
UTC[Unisonic Technologies]
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| FA5311 FA5315P FA5315PS FA5310 FA5310BP FA5310BPS |
Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
COLLMER SEMICONDUCTOR INC
|
| FA5304AP FA5304APS FA5305AP FA5305APS FA5304AS FA5 |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION
|
TOSHIBA
|
| GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
| GT60M302 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
